MOSFET NVR1P20T1 SOT-23 трубка с полевым эффектом P-Channel -20V -4A VBsemi полупроводниковый транзистор VB2290 вместо него

MOSFET NTMS7N03R2G SOP-8 трубка с полевым эффектом N-Channel 20V 11A VBsemi полупроводниковый транзистор VBA1210 вместо него

MOSFET NVR1P20T1 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET IRLML6302GTRPBF SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET 336P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2321DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NDS356P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR1P02LT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET AO3435A SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR0202PLT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET Si2399DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET 342P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET 2305GN-HF SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET 2325GN SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET AO4498E SOP-8 трубка с полевым эффектом N-Channel 30V 18A VBsemi, дискретный телефон VBA1303 вместо него

MOSFET RQK0604IGDQATL-E SOT-23 Field Effect Tube N—Channel 60V 4A VBsemi Discrete Semiconductor Transistor VB1695 Instead

MOSFET FDN5630-NL SOT-23 Field Effect Tube N—Channel 60V 4A VBsemi Discrete Semiconductor Transistor VB1695 Instead

MOSFET AO3422 SOT-23 Field Effect Tube N—Channel 60V 4A VBsemi Discrete Semiconductor Transistor VB1695 Instead

MOSFET 7N2 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET 2SK3408-T2B-A SOT-23 Field Effect Tube N—Channel 60V 4A VBsemi Discrete Semiconductor Transistor VB1695 Instead

MOSFET FDN335A-NL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET K2910 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET K3408-T2B-A SOT-23 Field Effect Tube N—Channel 60V 4A VBsemi Discrete Semiconductor Transistor VB1695 Instead

MOSFET IRLML2502TRPBF SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET AP2306N SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET APM2300CAC-TRL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET HM3N40R SOT-223-3 Field Effect Tube N-Channel 650V 4A VBsemi Discrete Semiconductor Transistor VBJ165R04 Instead

MOSFET RJK4036DP3-A0 SOT-223-3 Field Effect Tube N-Channel 650V 4A VBsemi Discrete Semiconductor Transistor VBJ165R04 Instead

MOSFET 02N60C3 SOT-223-3 Field Effect Tube N-Channel 650V 4A VBsemi Discrete Semiconductor Transistor VBJ165R04 Instead

Флэш-МОП-транзистор-8 флэш-канал-20 в-8 А VBsemi дискретный флэш-транзистор VBA2216 вместо него

Marking：1A3 SOT-23 PNP 20V 4A Mosfet Transistor New original

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