High Linearity Wideband RF Amplification 20dB 0.02-3G High Performance Medium Power Amplifier Module

Feature The high performance InGaP HBT MMIC amplifier uses a Darlington configuration and an active bias network The active bias network provides stable current variation with temperature and test process Designed to run directly from a 5V supply there is no need for a buck resistor compared to a typical Darlington amplifier The product is designed for high linearity requiring small size and minimal external 5V gain Description 1 Supply voltage typical 5V typical current value 90mA 2 Gain Typical value 20dB 2G Input and output impedance 50 ohms3 Maximum output power P1db 20dBm 2GHz4 Input signal 10dBm output signal is distorted when input is greater than 10dBm 5 Bandwidth 0 02 3GHZ the gain is slightly different at different frequencies 6 Noise figure 4 1dB 1GHz Package includes 1 x RF Amplifier