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MOSFET IRLML2502TRPBF SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

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артикул: 1005006122783502

$0.20

Доставка из: Китай

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MOSFET AP2306N SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET FDN335A-NL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

94%

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MOSFET FDN335A-NL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET APM2300CAC-TRL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

92%

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MOSFET APM2300CAC-TRL SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET K2910 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

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MOSFET K2910 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET 7N2 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

85%

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MOSFET 7N2 SOT-23 Field Effect Tube N—Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET Si2342DS-T1-GE3 SOT-23 Field Effect Tube N-Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

+153%

83%

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MOSFET Si2342DS-T1-GE3 SOT-23 Field Effect Tube N-Channel 20V 6A VBsemi Discrete Semiconductor Transistor VB1240 Instead

MOSFET SI2335DS-T1-E3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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MOSFET SI2335DS-T1-E3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET AO3401A SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

65%

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MOSFET AO3401A SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET 342P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

62%

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MOSFET 342P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET 336P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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MOSFET 336P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR4171PT1G SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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MOSFET NTR4171PT1G SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET SI2303BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

56%

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MOSFET SI2303BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET NVR1P20T1 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

55%

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MOSFET NVR1P20T1 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET AO3435A SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

54%

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MOSFET AO3435A SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET IRLML5203TRPBF SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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MOSFET IRLML6302GTRPBF SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SSM3J01F SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

47%

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MOSFET NTR1P02LT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

45%

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MOSFET SSC8013GS6 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

44%

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MOSFET SSC8013GS6 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET SI2307BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

41%

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MOSFET SI2307BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET NTR4502PT1G SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

38%

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MOSFET NTR4502PT1G SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET IRLML9301TRPBF SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

34%

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MOSFET IRLML9301TRPBF SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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MOSFET NTR0202PLT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2321DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

29%

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26%

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MOSFET 2305GN-HF SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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MOSFET NDS356P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

19%

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MOSFET NDS356P SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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18%

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MOSFET SI2323CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

MOSFET 2SJ557-T1B-A SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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MOSFET 2SJ557-T1B-A SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead

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