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MOSFET AO3415 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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артикул: 1005005809465066

$0.04

Доставка из: Китай

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MOSFET AO3415 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SPP2301 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

93%

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MOSFET SPP2301 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2301BDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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MOSFET SI2301BDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET DMG2301U-7 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

89%

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MOSFET DMG2301U-7 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR1P02LT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

88%

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MOSFET NTR1P02LT3G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET RC2301 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

85%

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MOSFET RC2301 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR4101PT1G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

83%

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MOSFET NTR4101PT1G SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2301DS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

80%

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MOSFET SI2301DS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2351DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

77%

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MOSFET SI2351DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2311DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

75%

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MOSFET SI2311DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET DMP2160U SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

72%

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MOSFET DMP2160U SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET RQJ0201UGDQATL-E SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

71%

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MOSFET RQJ0201UGDQATL-E SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2365EDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

68%

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MOSFET SI2365EDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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67%

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MOSFET DMP2004KQ-7 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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64%

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MOSFET AO3419 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2333CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

61%

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MOSFET SI2333CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET AO3423 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

60%

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MOSFET AO3423 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET DMP2004K-7-F SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

57%

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MOSFET DMP2004K-7-F SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET TP0202T-T1-E3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

54%

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MOSFET TP0202T-T1-E3 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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52%

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MOSFET DMP2225L SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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49%

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MOSFET Si2399DS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET NTR0202PLT1G SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

48%

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MOSFET NTR0202PLT1G SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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46%

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MOSFET IRLML6401TRPBF SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

45%

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MOSFET IRLML6401TRPBF SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET IRLML6302TRPBF SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

43%

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38%

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MOSFET AO2301 SOT-23 Field Effect Tube P—Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

MOSFET SI2305CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

37%

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MOSFET SI2305CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -20V -4A VBsemi Discrete Semiconductor Transistor VB2290 Instead

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