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MOSFET 2330GN SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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артикул: 1005006245707808

$0.30

Доставка из: Китай

График изменения цены & курс обмена валют

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MOSFET 2330GN-HF SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET 2330GN-HF SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET 2330GN SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET VBZ3442 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET VBZ3442 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET 2SK1849 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET 2SK1849 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET SQ2328ES-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

87%

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MOSFET SQ2328ES-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET BSS123N SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

84%

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MOSFET BSS123N SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET 2328S SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

82%

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MOSFET 2328S SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET ZXMN10A07FTA SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET ZXMN10A07FTA SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET SI2324DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

79%

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MOSFET SI2324DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET SI2328DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

78%

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MOSFET SI2328DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET IRLML0100TRPBF SOT-23 Field Effect Tube N-Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

77%

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MOSFET IRLML0100TRPBF SOT-23 Field Effect Tube N-Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET BSS119N SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

74%

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MOSFET BSS119N SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET RSR010N10 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

72%

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MOSFET RSR010N10 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET ZXMN10A07FTC SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

69%

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MOSFET ZXMN10A07FTC SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

68%

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MOSFET 2328S SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

65%

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MOSFET 2SK1849 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET AO3442 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET AO3442 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET BSH114 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

61%

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MOSFET BSH114 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

MOSFET 2SK2911 SOT-23 Field Effect Tube N—Channel 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET SI2324DS-T1-GE3 SOT-23 Field Effect Tube N-Channe 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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MOSFET SI2324DS-T1-GE3 SOT-23 Field Effect Tube N-Channe 100V 2A VBsemi Discrete Semiconductor Transistor VB1102M Instead

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48%

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MOSFET BSS123-7-F SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

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MOSFET BSS123-7-F SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

MOSFET BSS123A SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

38%

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MOSFET BSS123A SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

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MOSFET 2SK1589-T1B-A SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

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MOSFET 2SK1589-T1B-A SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

MOSFET 2320N-HF SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

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MOSFET BSS119 SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

27%

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MOSFET BSS119 SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

MOSFET 2320GN-HF SOT-23 Field Effect Tube N—Channel 100V 0.17A VBsemi Discrete Semiconductor Transistor VB1106K Instead

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