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Transistors - Bipolar (BJT) - RF
HN3C10FUTE85LF
sku: 4669-HN3C10FUTE85LF
$2.23
96.50 грн.
+3%
~
99.50 грн.
$2.23, $1.00 = 44.60 грн.
172.00 руб.
+1%
~
174.00 руб.
$2.23, $1.00 = 77.90 руб.
€ 1.91
+2%
~
€ 1.95
$2.23, € 1.00 = $1.15
Shipping from: Hong Kong
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Description
The Toshiba Semiconductor and Storage HN3C10FUTE85LF is a Transistors - Bipolar (BJT) - RF, low power operational designed for cost-sensitive applications.
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0.004, 18.57
2/1.955ms 0=0.113 1= 1.223/1 2= * 0.029/1 3= * 0.029/1 4= 0.732/1
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