20um silicon substrate interdigitated electrodes ide interdigital capacitor high precision sensor chip sputter mems (4mm-7mm)
Description
1. overall size: 4mm*7mm*0.52mm. 2. line width: 20um, line space: 20um. 3. electrode substrate is p-type monocrystalline silicon with 300nm thickness of sio2 on the surface of the silicon wafer. 4. conductor layer structure: cr/au, the thickness are 30nm and 100nm respectively. 5. the suitable temperature for using is from - 100 degrees celsius to +400 degrees celsius..syi
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