20um Monocrystalline Silicon Interdigitated Gold Electrodes IDE Interdigital Capacitor High Precision Sensor Chip Sputter MEMS (4mm-7mm)

1. overall size: 4mm*7mm. 2. Line Width: 30um, line space: 20um. 3. Electrode substrate is P-type monocrystalline silicon with 300nm thickness of SiO2 on the surface of the silicon wafer. 4. Conductor layer structure: Cr/Au, the thickness are10nm and 100nm respectively. 5. The suitable temperature for using is from - 100 degrees Celsius to +400 degrees Celsius. 6. Electrode resistance is more than 100T ohm (room temperature, humidity 64%).